Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 0.1A |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 1V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | PB free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC559
|
Siemens Semiconductor | 功能相似 |
PNP通用晶体管 PNP general purpose transistor
|
|||
BC559
|
ON Semiconductor | 功能相似 | TO-92 |
PNP通用晶体管 PNP general purpose transistor
|
||
BC559
|
Continental Device | 功能相似 | TO-92 |
PNP通用晶体管 PNP general purpose transistor
|
||
BC559
|
Infineon | 功能相似 | TO-92 |
PNP通用晶体管 PNP general purpose transistor
|
||
BC559
|
General Semiconductor | 功能相似 |
PNP通用晶体管 PNP general purpose transistor
|
|||
BC559
|
Semtech Corporation | 功能相似 |
PNP通用晶体管 PNP general purpose transistor
|
|||
BC560
|
Micro Electronics | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
BC560
|
Chemi-Con | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
MPS6516
|
Continental Device | 功能相似 | TO-92 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
|
||
MPS6516
|
Micro Electronics | 功能相似 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
|
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