Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 500 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 20000 @100mA, 5V |
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Technical parameters/rated power (Max): | 200 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-323-3 |
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Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-323-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Cut Tape (CT), Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMST6427-7-F
|
Diodes | 类似代替 | SOT-323-3 |
达林顿管 MMST6427-7-F SOT-323-3
|
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