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Model MMRF1308HR5
Description RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24.6 @ 230MHz, 50V, LDMOS, SOT1787
Product QR code
Brand: NXP
Packaging NI-1230-4H
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1753.92  yuan 1753.92yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5883) Minimum order quantity(1)
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Technical parameters/frequency:

230 MHz

 

Technical parameters/dissipated power:

1667000 mW

 

Technical parameters/output power:

600 W

 

Technical parameters/gain:

25 dB

 

Technical parameters/test current:

100 mA

 

Technical parameters/Input capacitance (Ciss):

342pF @50V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1667000 mW

 

Technical parameters/rated voltage:

133 V

 

Technical parameters/power supply voltage:

50 V

 

Package parameters/number of pins:

5

 

Encapsulation parameters/Encapsulation:

NI-1230-4H

 

Dimensions/Packaging:

NI-1230-4H

 

Physical parameters/operating temperature:

-65℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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