Chip AI consultant
Technical parameters/dissipated power: | 410 mW |
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Technical parameters/voltage regulation value: | 3.9 V |
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Technical parameters/regulated current: | 20mA |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Other/Minimum Packaging: | 3000 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX84C3V9
|
Diotec Semiconductor | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX84C3V9 单管二极管 齐纳, 3.9 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
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BZX84C3V9
|
先科ST | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BZX84C3V9 单管二极管 齐纳, 3.9 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
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BZX84C3V9
|
EIC | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX84C3V9 单管二极管 齐纳, 3.9 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
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BZX84C3V9
|
ST Microelectronics | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX84C3V9 单管二极管 齐纳, 3.9 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
||
|
BZX84C3V9
|
Won-Top Electronics | 类似代替 |
FAIRCHILD SEMICONDUCTOR BZX84C3V9 单管二极管 齐纳, 3.9 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
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BZX84C3V9
|
Vishay Semiconductor | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX84C3V9 单管二极管 齐纳, 3.9 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
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BZX84C3V9
|
ON Semiconductor | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX84C3V9 单管二极管 齐纳, 3.9 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
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MMBZ5228BLT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBZ5228BLT1G 单管二极管 齐纳, 3.9 V, 225 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
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MMSZ4685T1G
|
ON Semiconductor | 功能相似 | SOD-123-2 |
ON SEMICONDUCTOR MMSZ4685T1G 单管二极管 齐纳, 3.6 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
|
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MMSZ4686T1G
|
ON Semiconductor | 功能相似 | SOD-123 |
ON SEMICONDUCTOR MMSZ4686T1G 单管二极管 齐纳, 稳压器, 3.9 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
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