Technical parameters/rated voltage (DC): | 80.0 V |
|
Technical parameters/rated current: | 500 mA |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @100mA, 1V |
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Technical parameters/rated power (Max): | 225 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBTA06LT3G
|
ON Semiconductor | 完全替代 | SOT-23-3 |
ON SEMICONDUCTOR MMBTA06LT3G 双极性晶体管, NPN, 80V SOT-23
|
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