Technical parameters/power supply voltage (DC): | 5.00 V |
|
Technical parameters/number of output interfaces: | 1 |
|
Technical parameters/output current: | 5.20 mA |
|
Technical parameters/number of circuits: | 4 |
|
Technical parameters/number of logic gates: | 4 |
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Technical parameters/number of inputs: | 2 |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 2V ~ 6V |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 14 |
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Encapsulation parameters/Encapsulation: | DIP-14 |
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Dimensions/Length: | 19.56 mm |
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Dimensions/Width: | 6.6 mm |
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Dimensions/Height: | 3.56 mm |
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Dimensions/Packaging: | DIP-14 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MC74HC00AN
|
HITACHI | 类似代替 |
四2输入与非门高性能硅栅CMOS Quad 2−Input NAND Gate High−Performance Silicon−Gate CMOS
|
|||
MC74HC00AN
|
ON Semiconductor | 类似代替 | PDIP-14 |
四2输入与非门高性能硅栅CMOS Quad 2−Input NAND Gate High−Performance Silicon−Gate CMOS
|
||
MC74HC00ANG
|
ON Semiconductor | 功能相似 | PDIP-14 |
ON SEMICONDUCTOR MC74HC00ANG 逻辑芯片, CMOS, 与非门, 74HC00, 6V, DIP14
|
||
TC74HC00AP(F)
|
Toshiba | 完全替代 | DIP-14 |
NAND Gate 4Element 2IN CMOS 14Pin PDIP Tube
|
||
TC74HC00APF
|
Toshiba | 完全替代 | DIP-14 |
IC HC/UH SERIES, QUAD 2INPUT NAND GATE, PDIP14, 0.3INCH, 2.54MM PITCH, LEAD FREE, PLASTIC, DIP-14, Gate
|
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