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Model MJE340

Description STMicroelectronics ### Bipolar transistors, STMicroelectronics' various NPN and PNP bipolar transistors, including general-purpose, Darlington, power, and high-voltage devices, are surface mount and through-hole packaged.

Brand: ST Microelectronics

Packaging TO-126-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(6825) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):	300 V
Technical parameters/rated current:	500 mA
Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	20.8 W
Technical parameters/breakdown voltage (collector emitter):	300 V
Technical parameters/minimum current amplification factor (hFE):	30 @50mA, 10V
Technical parameters/rated power (Max):	20.8 W
Technical parameters/DC current gain (hFE):	240
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	2800 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-126-3
Dimensions/Length:	7.8 mm
Dimensions/Width:	2.7 mm
Dimensions/Height:	10.8 mm
Dimensions/Packaging:	TO-126-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Industrial, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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