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Model MJH11021

Description Darlington Complementary Silicon Power Transistors

Brand: ON Semiconductor

Packaging SOT-93-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-250 V
Technical parameters/rated current:	-15.0 A
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	150 W
Technical parameters/breakdown voltage (collector emitter):	250 V
Technical parameters/Maximum allowable collector current:	15A
Technical parameters/minimum current amplification factor (hFE):	400 @10A, 5V
Technical parameters/maximum current amplification factor (hFE):	15000
Technical parameters/rated power (Max):	150 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	65 ℃
Encapsulation parameters/installation method:	Through Hole
Encapsulation parameters/Encapsulation:	SOT-93-3
Dimensions/Length:	15.2 mm
Dimensions/Width:	4.9 mm
Dimensions/Height:	12.2 mm
Dimensions/Packaging:	SOT-93-3
Physical parameters/operating temperature:	-65℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Other/Minimum Packaging:	30
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Contains Lead
Customs information/ECCN code:	EAR99

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MJH11021	ON Semiconductor	功能相似	SOT-93-3	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150W	PDF
MJH11021G	ON Semiconductor	功能相似	TO-247-3	PNP 复合晶体管，On Semiconductor ### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管通用晶体管双 NPN 和 PNP 晶体管功率晶体管高电压晶体管射频双极晶体管低噪声，双匹配和复杂的双极晶体管	PDF
MJH11021G	Motorola	功能相似		PNP 复合晶体管，On Semiconductor ### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管通用晶体管双 NPN 和 PNP 晶体管功率晶体管高电压晶体管射频双极晶体管低噪声，双匹配和复杂的双极晶体管