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Model MJD253-1G
Description ON SEMICONDUCTOR MJD253-1G Power transistor, PNP, -100V, D-PAK
Product QR code
Brand: ON Semiconductor
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.69  yuan 3.69yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8545) Minimum order quantity(1)
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Technical parameters/frequency:

40 MHz

 

Technical parameters/rated voltage (DC):

-100 V

 

Technical parameters/rated current:

-4.00 A

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/polarity:

PNP

 

Technical parameters/dissipated power:

12.5 W

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/Maximum allowable collector current:

4A

 

Technical parameters/minimum current amplification factor (hFE):

40 @200mA, 1V

 

Technical parameters/maximum current amplification factor (hFE):

180

 

Technical parameters/rated power (Max):

1.4 W

 

Technical parameters/DC current gain (hFE):

40

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1400 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-251-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.35 mm

 

Dimensions/Height:

2.38 mm

 

Dimensions/Packaging:

TO-251-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MJD253-001 MJD253-001 ON Semiconductor 完全替代 TO-251-3
IPAK PNP 100V 4A
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