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Model MJ11021
Description Darlington Complementary Silicon Power Transistors
Product QR code
Brand: ON Semiconductor
Packaging TO-3
Delivery time
Packaging method Tray
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6836) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-250 V

 

Technical parameters/rated current:

-15.0 A

 

Technical parameters/polarity:

PNP

 

Technical parameters/dissipated power:

175000 mW

 

Technical parameters/breakdown voltage (collector emitter):

250 V

 

Technical parameters/Maximum allowable collector current:

15A

 

Technical parameters/minimum current amplification factor (hFE):

400 @10A, 5V

 

Technical parameters/maximum current amplification factor (hFE):

15000

 

Technical parameters/rated power (Max):

175 W

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/gain bandwidth:

3MHz (Min)

 

Technical parameters/dissipated power (Max):

175000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3

 

Dimensions/Height:

8.51 mm

 

Dimensions/Packaging:

TO-3

 

Physical parameters/operating temperature:

-65℃ ~ 200℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tray

 

Other/Minimum Packaging:

100

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MJ11021 MJ11021 ON Semiconductor 功能相似 TO-3
POWER TRANSISTORS(15A,150-250V,175W)
PDF
MJ11021 MJ11021 Mospec 功能相似
POWER TRANSISTORS(15A,150-250V,175W)
PDF

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