Technical parameters/rise/fall time: | 20ns, 24ns |
|
Technical parameters/number of output interfaces: | 1 |
|
Technical parameters/dissipated power: | 0.96 W |
|
Technical parameters/rise time: | 75 ns |
|
Technical parameters/descent time: | 75 ns |
|
Technical parameters/descent time (Max): | 75 ns |
|
Technical parameters/rise time (Max): | 75 ns |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/dissipated power (Max): | 960 mW |
|
Technical parameters/power supply voltage: | 4.5V ~ 18V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | PDIP-8 |
|
Dimensions/Length: | 9.65 mm |
|
Dimensions/Width: | 6.48 mm |
|
Dimensions/Height: | 3.43 mm |
|
Dimensions/Packaging: | PDIP-8 |
|
Physical parameters/operating temperature: | -40℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TC1412EPA
|
Microchip | 类似代替 | PDIP-8 |
TC1412 MOSFET Drivers ### MOSFET 和 IGBT 驱动器,Microchip
|
||
|
|
Telcom Semiconductor | 类似代替 | DIP |
MICROCHIP TC4421CPA.. 双功率芯片, 低压侧, 4.5V-18V电源, 9A输出, 33ns延迟, DIP-8
|
||
TC4421CPA
|
Microchip | 类似代替 | PDIP-8 |
MICROCHIP TC4421CPA.. 双功率芯片, 低压侧, 4.5V-18V电源, 9A输出, 33ns延迟, DIP-8
|
||
TC4422AVPA
|
Microchip | 类似代替 | PDIP-8 |
MICROCHIP TC4422AVPA 双路驱动器芯片, MOSFET, 低压侧, 4.5V-18V电源, 10A输出, 42ns延迟, DIP-8
|
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