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Model MGA-631P8-TR2G
Description Radio frequency junction gate field-effect transistor (RF JFET) transistor GaAs RFID LNA
Product QR code
Brand: Broadcom
Packaging WFDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
16.14  yuan 16.14yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4233) Minimum order quantity(1)
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Technical parameters/frequency:

400MHz ~ 1.5GHz

 

Technical parameters/power supply current:

54 mA

 

Technical parameters/dissipated power:

550 mW

 

Technical parameters/gain:

17.5 dB

 

Technical parameters/testing frequency:

900 MHz

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/dissipated power (Max):

550 mW

 

Technical parameters/power supply voltage:

4 V

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

WFDFN-8

 

Dimensions/Height:

0.75 mm

 

Dimensions/Packaging:

WFDFN-8

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MGA-631P8-BLKG MGA-631P8-BLKG Broadcom 完全替代 WFDFN-8
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MGA-631P8-TR1G MGA-631P8-TR1G AVAGO Technologies 完全替代 CSP-42
Wide Band Low Power, 400MHz Min, 1500MHz Max, 1 Func, GAAS, 2 X 2MM, 0.75MM HEIGHT, TSLP-8
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MGA-631P8-TR1G MGA-631P8-TR1G Broadcom 完全替代 WFDFN-8
Wide Band Low Power, 400MHz Min, 1500MHz Max, 1 Func, GAAS, 2 X 2MM, 0.75MM HEIGHT, TSLP-8
PDF
MGA-631P8-TR2G MGA-631P8-TR2G AVAGO Technologies 完全替代 TSLP-8
射频结栅场效应晶体管(RF JFET)晶体管 GaAs RFIC LNA
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MGA-631P8-TR2G MGA-631P8-TR2G Broadcom 完全替代 WFDFN-8
射频结栅场效应晶体管(RF JFET)晶体管 GaAs RFIC LNA
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MGA-633P8-BLKG MGA-633P8-BLKG AVAGO Technologies 功能相似 QFN-8
BROADCOM LIMITED MGA-633P8-BLKG 芯片, 放大器, 低噪, 有源偏置, 8QFN
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