Technical parameters/rated voltage (DC): | -100 V |
|
Technical parameters/rated current: | -3.00 A |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 100 V |
|
Technical parameters/Maximum allowable collector current: | 3A |
|
Technical parameters/minimum current amplification factor (hFE): | 10 @3A, 4V |
|
Technical parameters/rated power (Max): | 1.56 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD32CRLG
|
ON Semiconductor | 完全替代 | TO-252-3 |
PNP 功率晶体管，ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review