Technical parameters/power supply voltage (DC): | 20.0V (max) |
|
Technical parameters/rise/fall time: | 80ns, 40ns |
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Technical parameters/number of output interfaces: | 2 |
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Technical parameters/output voltage: | ≥10.0 V |
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Technical parameters/dissipated power: | 1000 mW |
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Technical parameters/descent time (Max): | 100 ns |
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Technical parameters/rise time (Max): | 150 ns |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Technical parameters/power supply voltage: | 10V ~ 15.6V |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | PDIP-8 |
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Dimensions/Packaging: | PDIP-8 |
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Physical parameters/operating temperature: | -40℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR2153PBF
|
Infineon | 功能相似 | PDIP-8 |
INFINEON IR2153PBF 芯片, MOSFET/IGBT驱动器 半桥
|
||
IR2153PBF
|
IFA | 功能相似 |
INFINEON IR2153PBF 芯片, MOSFET/IGBT驱动器 半桥
|
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