Technical parameters/rated power: | 1.3 W |
|
Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 8A |
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Technical parameters/rise time: | 3.5 ns |
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Technical parameters/Input capacitance (Ciss): | 888pF @15V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/descent time: | 3.5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6990A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6990A 双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.011 ohm, 10 V, 1.9 V
|
||
IRF7313TRPBF
|
Infineon | 功能相似 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.029Ω; ID 6.5A; SO-8; PD 2W; VGS +/-20V
|
||
IRF7313TRPBF
|
IFA | 功能相似 |
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.029Ω; ID 6.5A; SO-8; PD 2W; VGS +/-20V
|
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