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Model 2SD1898T100Q

Description ROHM 2SD1898T100Q Single transistor bipolar, NPN, 80 V, 100 MHz, 500 mW, 500 mA, 82 hFE

Brand: ROHM Semiconductor

Packaging SOT-89

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	100 MHz
Technical parameters/rated voltage (DC):	80.0 V
Technical parameters/rated current:	1.00 A
Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	500 mW
Technical parameters/breakdown voltage (collector emitter):	80 V
Technical parameters/Maximum allowable collector current:	1A
Technical parameters/minimum current amplification factor (hFE):	120 @500mA, 3V
Technical parameters/rated power (Max):	2 W
Technical parameters/DC current gain (hFE):	82
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-89
Dimensions/Packaging:	SOT-89
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15