Technical parameters/operating voltage: | 2.4V ~ 5.5V |
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Technical parameters/power supply current: | 420 µA |
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Technical parameters/number of circuits: | 2 |
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Technical parameters/number of channels: | 2 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/dissipated power: | 471 mW |
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Technical parameters/Common Mode Rejection Ratio: | 70 dB |
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Technical parameters/bandwidth: | 3 MHz |
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Technical parameters/conversion rate: | 300 mV/μs |
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Technical parameters/gain bandwidth product: | 3 MHz |
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Technical parameters/input compensation voltage: | 70 µV |
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Technical parameters/input bias current: | 1 pA |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/gain bandwidth: | 3 MHz |
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Technical parameters/power supply voltage: | 2.4V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 2.4 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Signal Processing, Portable Devices, Wireless, Wireless, Signal Processing |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MAX4252ESA-T
|
Maxim Integrated | 完全替代 | SOIC-8 |
Op Amp Dual GP R-R O/P ±2.75V/5.5V 8Pin SOIC N T/R
|
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