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Model CSD16415Q5

Description N Channel NexFET Power MOSFET

Brand: TI

Packaging 8-VSON-CLIP

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	3.2 W
Technical parameters/threshold voltage:	1.5 V
Technical parameters/drain source voltage (Vds):	25 V
Technical parameters/Continuous drain current (Ids):	38A
Technical parameters/rise time:	30 ns
Technical parameters/Input capacitance (Ciss):	4100pF @12.5V(Vds)
Technical parameters/rated power (Max):	3.2 W
Technical parameters/descent time:	12.7 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	3.2W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	8-VSON-CLIP
Dimensions/Length:	6.1 mm
Dimensions/Width:	5.1 mm
Dimensions/Height:	1.05 mm
Dimensions/Packaging:	8-VSON-CLIP
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Supply in progress
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power management, computers and computer peripherals, industrial, communication and networking
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead
Compliant with standard/REACH SVHC version:	2015/06/15