Technical parameters/power supply voltage (DC): | 5.00 V, 5.50 V (max) |
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Technical parameters/clock frequency: | 1.00 MHz, 2.00 MHz, 2.00 MHz (max) |
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Technical parameters/access time: | 1.00 µs, 2.00 µs |
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Technical parameters/memory capacity: | 4000 B |
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Technical parameters/power supply voltage: | 2.7V ~ 5.5V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT93C66-10SI-2.7
|
Microchip | 完全替代 | SOIC-8 |
EEPROM Serial-3Wire 4Kbit 512 x 8/256 x 16 3.3V/5V 8Pin SOIC EEPROM Serial-3Wire 4Kbit 512 x 8/256 x 16 3.3V/5V 8-...
|
||
AT93C66A-10SU-2.7
|
Microchip | 类似代替 | SOIC-8 |
EEPROM Serial-3Wire 4Kbit 512 x 8/256 x 16 3.3V/5V 8Pin SOIC
|
||
CAT93C66VI-GT3
|
ON Semiconductor | 功能相似 | SOIC-8 |
ON SEMICONDUCTOR CAT93C66VI-GT3. 芯片, 存储器, EEPROM, 4Kb, 串行口, 2MHZ, SOIC-8
|
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