Technical parameters/output current: | 175 mA |
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Technical parameters/power supply current: | 16 mA |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/number of channels: | 1 |
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Technical parameters/dissipated power: | 0.75 W |
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Technical parameters/Common Mode Rejection Ratio: | 50 dB |
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Technical parameters/Input capacitance: | 2.60 pF |
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Technical parameters/conversion rate: | 5.50 kV/μs |
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Technical parameters/gain bandwidth product: | 1 GHz |
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Technical parameters/input impedance: | 110 kΩ |
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Technical parameters/input compensation voltage: | 2 mV |
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Technical parameters/input bias current: | 50 µA |
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Technical parameters/input voltage (Min): | 5 V |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/3dB bandwidth: | 1 GHz |
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Technical parameters/gain bandwidth: | 50 dB |
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Technical parameters/dissipated power (Max): | 750 mW |
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Technical parameters/Common Mode Rejection Ratio (Min): | 50 dB |
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Technical parameters/power supply voltage (Max): | 12 V |
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Technical parameters/power supply voltage (Min): | 5 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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