Technical parameters/number of channels: | 1 |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 3.1 W |
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Technical parameters/threshold voltage: | 1.5 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 100A |
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Technical parameters/rise time: | 9 ns |
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Technical parameters/Input capacitance (Ciss): | 4230pF @30V(Vds) |
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Technical parameters/descent time: | 3 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3.1W (Ta), 195W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | VSON-Clip-8 |
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Dimensions/Width: | 5 mm |
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Dimensions/Packaging: | VSON-Clip-8 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs Information/Hong Kong Import and Export License: | NLR |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD18540Q5BT
|
TI | 类似代替 | VSON-Clip-8 |
TEXAS INSTRUMENTS CSD18540Q5BT 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0018 ohm, 10 V, 1.9 V
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