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Model 2N6491G
Description ON SEMICONDUCTOR 2N6491G Single transistor bipolar, universal, PNP, -80 V, 5 MHz, 1.8 W, -15 A, 5 hFE
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Brand: ON Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.16  yuan 4.16yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2957) Minimum order quantity(1)
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Technical parameters/frequency:

5 MHz

 

Technical parameters/rated voltage (DC):

-80.0 V

 

Technical parameters/rated current:

15.0 A

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

PNP, P-Channel

 

Technical parameters/dissipated power:

1.8 W

 

Technical parameters/breakdown voltage (collector emitter):

80 V

 

Technical parameters/thermal resistance:

1.67℃/W (RθJC)

 

Technical parameters/Maximum allowable collector current:

15A

 

Technical parameters/minimum current amplification factor (hFE):

20 @5A, 4V

 

Technical parameters/maximum current amplification factor (hFE):

150

 

Technical parameters/rated power (Max):

1.8 W

 

Technical parameters/DC current gain (hFE):

5

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1800 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.28 mm

 

Dimensions/Width:

4.82 mm

 

Dimensions/Height:

15.75 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Designed for use in general-purpose amplifier and switching applications.

 

Compliant with standards/RoHS standards:

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