Technical parameters/rated current: | 4.00 A |
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Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.05 Ω |
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Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/dissipated power: | 1.4 W |
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Technical parameters/product series: | IRF7309 |
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Technical parameters/threshold voltage: | 1 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/Continuous drain current (Ids): | 4.70 A |
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Technical parameters/thermal resistance: | 62.5 K/W |
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Technical parameters/Input capacitance (Ciss): | 520pF @15V(Vds) |
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Technical parameters/rated power (Max): | 1.4 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7309PBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7309PBF 双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
|
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