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Specification parameters
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Technical parameters/tolerances:

±2.21 %

Technical parameters/Input voltage (DC):

1.24V ~ 6.00V

Technical parameters/output voltage:

2.495V ~ 36V

Technical parameters/output current:

100 mA

Technical parameters/power supply current:

100 mA

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/Input voltage (Max):

37 V

Technical parameters/output voltage (Max):

36 V

Technical parameters/output voltage (Min):

2.495 V

Technical parameters/output current (Max):

100 mA

Technical parameters/operating temperature (Max):

105 ℃

Technical parameters/operating temperature (Min):

-40 ℃

Technical parameters/accuracy:

2 %

Technical parameters/input voltage:

37 V

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

4.9 mm

Dimensions/Width:

3.9 mm

Dimensions/Height:

1.25 mm

Dimensions/Packaging:

SOIC-8

Physical parameters/operating temperature:

-40℃ ~ 105℃

Physical parameters/temperature coefficient:

±100 ppm/℃

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with the REACH SVHC standard:

No SVHC

Compliant with standard/REACH SVHC version:

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
TL431AIDR	ON Semiconductor	功能相似	SOP	TEXAS INSTRUMENTS TL431AIDR 电压基准, 精密, 分流 - 可调, TL431系列, 2.495V至36V, SOIC-8	PDF
TL431AIDR	TI	功能相似	SOIC-8	TEXAS INSTRUMENTS TL431AIDR 电压基准, 精密, 分流 - 可调, TL431系列, 2.495V至36V, SOIC-8
TL431CDT	ST Microelectronics	完全替代	SOIC-8	STMicroelectronics ### 电压参考，STMicroelectronics	PDF
TL431CDT	Samsung	完全替代		STMicroelectronics ### 电压参考，STMicroelectronics	PDF
TL431ID	ON Semiconductor	类似代替	SOIC	可编程电压参考 Programmable voltage reference	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
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Tel: +86-0755-82866643