Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.3 Ω |
|
Technical parameters/dissipated power: | 0.5 W |
|
Technical parameters/threshold voltage: | 600 mV |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/rise time: | 30 ns |
|
Technical parameters/Input capacitance (Ciss): | 195pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 460 mW |
|
Technical parameters/descent time: | 27 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 2.92 mm |
|
Dimensions/Width: | 1.4 mm |
|
Dimensions/Height: | 0.94 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Consumer electronics, computers and computer peripherals, power management, portable devices |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDS332P
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR NDS332P.... 晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review