Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.295 Ω |
|
Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 110 W |
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Technical parameters/drain source voltage (Vds): | 150 V |
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Technical parameters/Continuous drain current (Ids): | 13A |
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Technical parameters/rise time: | 36 ns |
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Technical parameters/Input capacitance (Ciss): | 860pF @25V(Vds) |
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Technical parameters/rated power (Max): | 110 W |
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Technical parameters/descent time: | 37 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 110W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR6215PBF
|
International Rectifier | 完全替代 | TO-252-3 |
INFINEON IRFR6215PBF 晶体管, MOSFET, P沟道, 13 A, -150 V, 295 mohm, -10 V, -4 V
|
||
|
|
IFC | 完全替代 |
INFINEON IRFR6215TRPBF 晶体管, MOSFET, P沟道, -13 A, -150 V, 295 mohm, -10 V, -4 V
|
|||
IRFR6215TRPBF
|
Infineon | 完全替代 | TO-252-3 |
INFINEON IRFR6215TRPBF 晶体管, MOSFET, P沟道, -13 A, -150 V, 295 mohm, -10 V, -4 V
|
||
IRFR6215TRRPBF
|
Infineon | 类似代替 | TO-252-3 |
场效应管(MOSFET) IRFR6215TRRPBF DPAK
|
||
IRFR6215TRRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
场效应管(MOSFET) IRFR6215TRRPBF DPAK
|
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