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Model SBC817-40LT1G
Description ON SEMICONDUCTOR SBC817-40LT1G Bipolar (BJT) Single Transistor, AEC-Q101, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE 新
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.2  yuan 0.2yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9999) Minimum order quantity(1)
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Technical parameters/frequency:

100 MHz

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

225 mW

 

Technical parameters/breakdown voltage (collector emitter):

45 V

 

Technical parameters/Maximum allowable collector current:

0.5A

 

Technical parameters/minimum current amplification factor (hFE):

250 @100mA, 1V

 

Technical parameters/rated power (Max):

300 mW

 

Technical parameters/DC current gain (hFE):

40

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

3.04 mm

 

Dimensions/Width:

2.64 mm

 

Dimensions/Height:

1.11 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

Customs information/ECCN code:

EAR99

 

Customs Information/Hong Kong Import and Export License:

NLR

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BC817-40LT3G BC817-40LT3G ON Semiconductor 完全替代 SOT-23-3
ON SEMICONDUCTOR BC817-40LT3G Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE 新

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