Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFB20N50K
|
International Rectifier | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
||
IRFB20N50K
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
||
|
|
VISHAY | 完全替代 |
Mosfet n-Channel 500V
|
|||
SIHFB20N50K-E3
|
Vishay Semiconductor | 完全替代 |
Mosfet n-Channel 500V
|
|||
STP20NK50Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP20NK50Z 晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V
|
||
STP23NM50N
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™,500V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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