Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2.8 W |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/Continuous drain current (Ids): | 5.10 A |
|
Technical parameters/Input capacitance (Ciss): | 340pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 1 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL024ZPBF
|
IRF | 功能相似 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
|||
IRFL024ZPBF
|
Infineon | 功能相似 | TO-261-4 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
||
IRFL024ZPBF
|
International Rectifier | 功能相似 | TO-261-4 |
INFINEON IRFL024ZPBF 晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
|
||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review