Technical parameters/rise/fall time: | 150ns, 50ns |
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Technical parameters/number of output interfaces: | 2 |
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Technical parameters/dissipated power: | 625 mW |
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Technical parameters/descent time (Max): | 80 ns |
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Technical parameters/rise time (Max): | 220 ns |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Technical parameters/power supply voltage: | 10V ~ 20V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR25606SPBF
|
Infineon | 完全替代 | SOIC-8 |
INFINEON IR25606SPBF 驱动器, IGBT, MOSFET, 半桥, 10V-20V电源, 350mA输出, 200ns延迟, SOIC-8
|
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