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Model IR2103STRPBF

Description P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

Brand: Infineon

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rise/fall time:	100ns, 50ns
Technical parameters/number of output interfaces:	2
Technical parameters/number of pins:	8
Technical parameters/dissipated power:	625 mW
Technical parameters/Static current:	270 µA
Technical parameters/rise time:	170 ns
Technical parameters/descent time:	60 ns
Technical parameters/descent time (Max):	90 ns
Technical parameters/rise time (Max):	170 ns
Technical parameters/operating temperature (Max):	125 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Technical parameters/dissipated power (Max):	625 mW
Technical parameters/power supply voltage:	10V ~ 20V
Technical parameters/power supply voltage (Max):	20 V
Technical parameters/power supply voltage (Min):	10 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-40℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IR2101STRPBF	International Rectifier	类似代替	SOIC-8	INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8	PDF
IR2101STRPBF	IFA	类似代替		INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8
IR2101STRPBF	IFC	类似代替		INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8