Technical parameters/number of pins: | 6 |
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Technical parameters/drain source resistance: | 0.35 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 1.5A |
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Technical parameters/rise time: | 15 ns |
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Technical parameters/Input capacitance (Ciss): | 950pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1.25 W |
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Technical parameters/descent time: | 10 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 600mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | TSOT-23-6 |
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Dimensions/Packaging: | TSOT-23-6 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not For New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RQ6P015SPTR
|
ROHM Semiconductor | 类似代替 | TSOT-23-6 |
ROHM RQ6P015SPTR 晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V
|
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