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Model FDMS86500DC
Description ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDMS86500DC, 108 A, Vds=60 V, 8引脚 Power 56封装
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Brand: ON Semiconductor
Packaging TDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.91  yuan 3.91yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6763) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0019 Ω

 

Technical parameters/dissipated power:

3.2 W

 

Technical parameters/threshold voltage:

3.7 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/rise time:

25 ns

 

Technical parameters/Input capacitance (Ciss):

5775pF @30V(Vds)

 

Technical parameters/rated power (Max):

3.2 W

 

Technical parameters/descent time:

8.2 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

125 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

TDFN-8

 

Dimensions/Length:

5.1 mm

 

Dimensions/Width:

5.85 mm

 

Dimensions/Height:

1.05 mm

 

Dimensions/Packaging:

TDFN-8

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

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