Technical parameters/rated power: | 0.15 W |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 0.15 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 10V |
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Technical parameters/rated power (Max): | 150 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/gain bandwidth: | 250 MHz |
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Technical parameters/dissipated power (Max): | 150 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | VMT-3 |
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Dimensions/Packaging: | VMT-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTC015EEBTL
|
ROHM Semiconductor | 完全替代 | SOT-490 |
数字晶体管 DTC015EEBTL SC-89(SOT-490)
|
||
DTC043ZEBTL
|
ROHM Semiconductor | 完全替代 | SOT-416 |
双电阻器数字 NPN 晶体管，ROHM ### Digital Transistors, ROHM Resistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
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