Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 9.20 A |
|
Technical parameters/rated power: | 60 W |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.27 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 60 W |
|
Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 9.20 A |
|
Technical parameters/rise time: | 30 ns |
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Technical parameters/Input capacitance (Ciss): | 360pF @25V(Vds) |
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Technical parameters/rated power (Max): | 60 W |
|
Technical parameters/descent time: | 20 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Minimum Packaging: | 50 |
|
Other/Manufacturing Applications: | Industrial, Commercial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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IRF520NPBF
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Vishay Semiconductor | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF520NPBF 场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB 新
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International Rectifier | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF520NPBF 场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB 新
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