Chip AI consultant
Encapsulation parameters/Encapsulation: | DFN-8_EP(3x3) |
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Dimensions/Packaging: | DFN-8_EP(3x3) |
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Other/Cos (pF): | 300 |
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Other/FET types: | P-Channel |
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Other/Gate Voltage Vgs: | 25V |
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Other/Rds On (Max) @ Id, Vgs: | 11mΩ@10V |
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Other/Crss (pF): | 260 |
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Other/drain source voltage Vds: | -30V |
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Other/Rds On (Max) @ 4.5V: | 18.5mΩ |
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Other/ESD Dior: | No |
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Other/Ciss (pF): | 1995 |
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Other/Terr (ns): | 13.3 |
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Other/Qrr (nC): | 20 |
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Other/Qgd (nC): | 8.8 |
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Other/VGS (th): | -2.3 |
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Other/QG * (nC): | 17 |
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Other/Pd - power dissipation (Max): | 28W |
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Other/continuous drain current Id: | -24A |
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Other Schottky Dior: | No |
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Other/Packaging/Shell: | DFN 3x3 |
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Compliant with standards/RoHS standards: | Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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