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Encapsulation parameters/Encapsulation: | DFN |
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Dimensions/Packaging: | DFN |
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Other/Cos (pF): | 360 |
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Other/FET types: | N-Channel |
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Other/Gate Voltage Vgs: | 20V |
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Other/Rds On (Max) @ Id, Vgs: | 7mΩ@10V |
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Other/Crss (pF): | 9 |
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Other/drain source voltage Vds: | 120V |
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Other/Rds On (Max) @ 4.5V: | 9mΩ |
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Other/ESD Dior: | No |
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Other/Ciss (pF): | 3295 |
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Other/Terr (ns): | 43 |
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Other/Qrr (nC): | 355 |
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Other/Qgd (nC): | 5.5 |
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Other/VGS (th): | 2.4 |
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Other/QG * (nC): | 20 |
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Other/Pd - power dissipation (Max): | 215W |
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Other/continuous drain current Id: | 85A |
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Other Schottky Dior: | No |
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Other/Packaging/Shell: | DFN 5x6 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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