Technical parameters/rated voltage (DC): | 100 V |
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Technical parameters/rated current: | 36.0 A |
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Technical parameters/polarity: | N-CH |
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Technical parameters/product series: | IRL540NS |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 36.0 A |
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Technical parameters/rise time: | 81 ns |
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Technical parameters/Input capacitance (Ciss): | 1800pF @25V(Vds) |
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Technical parameters/descent time: | 62 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3800 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263 |
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Dimensions/Packaging: | TO-263 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL540NSPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRL540NSPBF 晶体管, MOSFET, N沟道, 36 A, 100 V, 44 mohm, 10 V, 2 V
|
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IRL540NSPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRL540NSPBF 晶体管, MOSFET, N沟道, 36 A, 100 V, 44 mohm, 10 V, 2 V
|
||
|
|
IFC | 功能相似 |
HEXFET® N 通道功率 MOSFET 最大 50A，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
|||
IRL540NSTRRPBF
|
Infineon | 功能相似 | TO-263-3 |
D2PAK N-CH 100V 36A
|
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