Technical parameters/minimum current amplification factor (hFE): | 25 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Length: | 6.7 mm |
|
Dimensions/Width: | 3.7 mm |
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Dimensions/Height: | 1.65 mm |
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Dimensions/Packaging: | SOT-223 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PZT2907AT1
|
Rochester | 功能相似 |
PNP硅晶体管表面贴装 PNP SILICON TRANSISTOR SURFACE MOUNT
|
|||
|
|
NXP | 功能相似 | SC-73 |
PNP硅晶体管表面贴装 PNP SILICON TRANSISTOR SURFACE MOUNT
|
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