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Model FQP17P06
Description FQP17P06 系列 60 V 0.12 Ohm 通孔 P沟道 Mosfet - TO-220-3
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Brand: ON Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
7.82  yuan 7.82yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1694) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.12 Ω

 

Technical parameters/dissipated power:

79 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/rise time:

100 ns

 

Technical parameters/Input capacitance (Ciss):

690pF @25V(Vds)

 

Technical parameters/rated power (Max):

79 W

 

Technical parameters/descent time:

60 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

79000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.1 mm

 

Dimensions/Width:

4.7 mm

 

Dimensions/Height:

9.4 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Rail, Tube

 

Other/Manufacturing Applications:

Motor drive and control, lighting, audio, power management

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQPF7N10 FQPF7N10 Freescale 功能相似
100V N沟道MOSFET 100V N-Channel MOSFET
FQPF7N10 FQPF7N10 Fairchild 功能相似 TO-220-3
100V N沟道MOSFET 100V N-Channel MOSFET
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