Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.24 Ω |
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Technical parameters/dissipated power: | 0.625 W |
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Technical parameters/threshold voltage: | 1 V |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/rise time: | 8 ns |
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Technical parameters/Input capacitance (Ciss): | 60pF @10V(Vds) |
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Technical parameters/rated power (Max): | 446 mW |
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Technical parameters/descent time: | 2.4 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-89 |
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Dimensions/Length: | 1.7 mm |
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Dimensions/Width: | 0.98 mm |
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Dimensions/Height: | 0.78 mm |
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Dimensions/Packaging: | SOT-89 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTK3134NT1G
|
ON Semiconductor | 功能相似 | SOT-723-3 |
ON SEMICONDUCTOR NTK3134NT1G 晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
|
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