Technical parameters/power supply voltage (DC): | 15.0 V |
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Technical parameters/power supply current: | 2.5 mA |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/dissipated power: | 500 mW |
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Technical parameters/Common Mode Rejection Ratio: | 70 dB |
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Technical parameters/Input capacitance: | 5.50 pF |
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Technical parameters/bandwidth: | 4 MHz |
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Technical parameters/conversion rate: | 20.0 V/μs |
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Technical parameters/gain bandwidth product: | 4.00 MHz |
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Technical parameters/input impedance: | 3.00 TΩ |
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Technical parameters/input compensation voltage: | 300 µV |
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Technical parameters/input bias current: | 15 pA |
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Technical parameters/operating temperature (Max): | 70 ℃ |
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Technical parameters/operating temperature (Min): | 0 ℃ |
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Technical parameters/3dB bandwidth: | 4 MHz |
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Technical parameters/dissipated power (Max): | 500 mW |
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Technical parameters/Common Mode Rejection Ratio (Min): | 70 dB |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Signal P Alternative material
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