Technical parameters/frequency:
3 MHz
Technical parameters/rated voltage (DC):
-100 V
Technical parameters/rated current:
-6.00 A
Technical parameters/number of pins:
3
Technical parameters/polarity:
PNP, P-Channel
Technical parameters/dissipated power:
65 W
Technical parameters/gain bandwidth product:
3 MHz
Technical parameters/breakdown voltage (collector emitter):
100 V
Technical parameters/thermal resistance:
1.67℃/W (RθJC)
Technical parameters/Maximum allowable collector current:
6A
Technical parameters/minimum current amplification factor (hFE):
15 @3A, 4V
Technical parameters/rated power (Max):
2 W
Technical parameters/DC current gain (hFE):
3
Technical parameters/operating temperature (Max):
150 ℃
Technical parameters/operating temperature (Min):
-65 ℃
Technical parameters/dissipated power (Max):
2000 mW
Encapsulation parameters/installation method:
Through Hole
Package parameters/number of pins:
3
Encapsulation parameters/Encapsulation:
TO-220-3
Dimensions/Length:
10.28 mm
Dimensions/Width:
4.83 mm
Dimensions/Height:
15.75 mm
Dimensions/Packaging:
TO-220-3
Physical parameters/materials:
Silicon
Physical parameters/operating temperature:
-65℃ ~ 150℃
Other/Product Lifecycle:
Active
Other/Packaging Methods:
Tube
Other/Manufacturing Applications:
Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards:
RoHS Compliant
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