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Model 2SK1058
Description 硅N沟道MOS FET Silicon N Channel MOS FET
Product QR code
Brand: Renesas Electronics
Packaging TO-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
28.57  yuan 28.57yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3144) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

160 V

 

Technical parameters/rated current:

7.00 A

 

Technical parameters/drain source voltage (Vds):

160 V

 

Technical parameters/Continuous drain current (Ids):

7.00 A

 

Technical parameters/Input capacitance (Ciss):

600pF @10V(Vds)

 

Technical parameters/rated power (Max):

100 W

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3

 

Dimensions/Packaging:

TO-3

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SK1058 2SK1058 Renesas Electronics 功能相似 TO-3
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2SK1058 2SK1058 HITACHI 功能相似 TO-3
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