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Model FDG8842CZ

Description FAIRCHILD SEMICONDUCTOR FDG8842CZ 双路场效应管, MOSFET, N和P沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V

Brand: Fairchild

Packaging SC-70-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	0.25 Ω
Technical parameters/polarity:	N-Channel, P-Channel
Technical parameters/dissipated power:	360 mW
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	30V, 25V
Technical parameters/Continuous drain current (Ids):	750 mA
Technical parameters/Input capacitance (Ciss):	120pF @10V(Vds)
Technical parameters/rated power (Max):	300 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	360 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SC-70-6
Dimensions/Length:	2 mm
Dimensions/Width:	1.25 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SC-70-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

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