Technical parameters/rated voltage (DC): | 6.10 V |
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Technical parameters/operating voltage: | 1.50 V |
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Technical parameters/capacitance: | 100 pF |
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Technical parameters/rated power: | 200 W |
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Technical parameters/breakdown voltage: | 6.1 V|6.1 V |
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Technical parameters/number of circuits: | 6 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/test current: | 1 mA |
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Technical parameters/maximum reverse breakdown voltage: | 7.2 V |
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Technical parameters/peak pulse power: | 200 W |
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Technical parameters/minimum reverse breakdown voltage: | 6.1 V |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.25 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | Defense, Consumer Electronics, Aerospace, Defence, Military, |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standards/military grade: | Yes |
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Compliant with standard/REACH SVHC version: | 2014/06/16 |
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