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Specification parameters
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Technical parameters/rated voltage (DC):

-30.0 V

Technical parameters/rated current:

-6.80 A

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.03 Ω

Technical parameters/polarity:

P-Channel

Technical parameters/dissipated power:

2.4 W

Technical parameters/Input capacitance:

1.07 nF

Technical parameters/gate charge:

24.0 nC

Technical parameters/drain source voltage (Vds):

30 V

Technical parameters/Continuous drain current (Ids):

6.80 A

Technical parameters/rise time:

21 ns

Technical parameters/Input capacitance (Ciss):

1070pF @15V(Vds)

Technical parameters/rated power (Max):

900 mW

Technical parameters/descent time:

31 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

2.4W (Ta)

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

MicroFET-6

Dimensions/Length:

2 mm

Dimensions/Width:

2 mm

Dimensions/Height:

0.75 mm

Dimensions/Packaging:

MicroFET-6

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with the

Alternative material

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	IRFHS9301TRPBF	Infineon	功能相似	PQFN-6	P 通道功率 MOSFET 最大 7A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643