Technical parameters/number of channels: | 2 |
|
Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 14A |
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Technical parameters/rise time: | 260 ns |
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Technical parameters/Input capacitance (Ciss): | 1620pF @15V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/descent time: | 712 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 10 |
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Encapsulation parameters/Encapsulation: | XFBGA-10 |
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Dimensions/Length: | 3.42 mm |
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Dimensions/Width: | 1.52 mm |
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Dimensions/Height: | 0.2 mm |
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Dimensions/Packaging: | XFBGA-10 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD83325L
|
TI | 功能相似 | XFBGA-6 |
CSD83325L,双路 N 通道 NexFET™ 功率 MOSFET
|
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