Technical parameters/drain source resistance: | 200 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 830 mW |
|
Technical parameters/breakdown voltage of gate source: | ±12.0 V |
|
Technical parameters/Continuous drain current (Ids): | 2.00 A |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | TSOP |
|
Dimensions/Packaging: | TSOP |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3900DV-T1-E3
|
Vishay Semiconductor | 功能相似 | TSOP-6 |
MOSFET N-CH DUAL 20V 2A 6-TSOP
|
||
SI3900DV-T1-E3
|
VISHAY | 功能相似 | TSOP-6 |
MOSFET N-CH DUAL 20V 2A 6-TSOP
|
||
SI3900DV-T1-GE3
|
Vishay Semiconductor | 类似代替 | TSOP |
MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V
|
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