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Model NDC7002N
Description ON Semiconductor 双 Si N沟道 MOSFET NDC7002N, 510 mA, Vds=50 V, 6引脚 SOT-23封装
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Brand: ON Semiconductor
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.07  yuan 1.07yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9558) Minimum order quantity(1)
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Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

2 Ω

 

Technical parameters/dissipated power:

900 mW

 

Technical parameters/threshold voltage:

1.9 V

 

Technical parameters/Input capacitance:

20 pF

 

Technical parameters/drain source voltage (Vds):

50 V

 

Technical parameters/rise time:

6 ns

 

Technical parameters/Input capacitance (Ciss):

20pF @25V(Vds)

 

Technical parameters/rated power (Max):

700 mW

 

Technical parameters/descent time:

5 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

960 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

TSOT-23-6

 

Dimensions/Length:

3 mm

 

Dimensions/Width:

1.7 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

TSOT-23-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, power management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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